| PART |
Description |
Maker |
| PE4246 |
Absorbtive SPST ;Operating Frequency (MHz) = DC - 5000 ;; P1dB (dBm) = 33 ;; Insertion Loss (dB, 1GHz) = 0.80 ;; ISOlation (dB, 1GHz) = 55 ;6L MLPM
|
PEREQRINE
|
| TSH690 TSH690ID |
40MHz to 1GHz AMPLIFIER
|
STMicroelectronics
|
| EL5191C EL5191CS EL5191CS-T13 EL5191CS-T7 EL5191CW |
1GHz Current Feedback Amplifier
|
ELANTEC[Elantec Semiconductor]
|
| NJG1105F |
1.9/2.1GHz LOW NOISE AMPLIFIER GaAs MMIC
|
NJRC[New Japan Radio]
|
| EL5191 EL5191A |
Op Amp, 1GHz, Current Feedback Amplifier, with Enable
|
Intersil
|
| AM42-0039_1 AM42-0039 AM42-00391 |
2Watt C-Band VSAT Power Amplifier 5.9-7.1GHz
|
MACOM[Tyco Electronics]
|
| ALM31122-BLKG ALM31122-TR1G ALM31122-TR2G |
700MHz - 1GHz 1-Watt High Linearity Amplifier
|
AVAGO TECHNOLOGIES LIMITED
|
| D2231UK D2229UK D2230 D2230UK D2231 |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(7.5W-12.5V-1GHz,Single Ended)(镀金多用DMOS射频硅场效应7.5W-12.5V-1GHz,单端)
METAL GATE RF SILICON FET
|
SEME-LAB[Seme LAB]
|
| RFDA0066 RFDA0066PCK-410 RFDA0066SQ RFDA0066TR13 R |
DIGITAL CONTROLLED VARIABLE GAIN AMPLIFIER 5MHz TO 1GHz, 12-BIT 0.5dB LSB CONTROL
|
RF Micro Devices
|
| D2020UK D1211 D1211UK D2019 D2019UK |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(5W-28V-1GHz,Single Ended)(镀金多用DMOS射频硅场效应5W-28V-1GHz,单端)
METAL GATE RF SILICON FET
|
SEME-LAB[Seme LAB]
|
| ADSP-BF608 ADSP-BF609 ADSP-BF607 |
Blackfin Dual-Core Processor up to 1GHz with Hardware Support for VGA Video Analytics
Blackfin Dual-Core Processor up to 1GHz with Hardware Support for HD Video Analytics
Blackfin Dual-Core Processor up to 1GHz for High Performance Digital Signal Processing Applications
|
Analog Devices
|
